SI7423DN-T1-E3
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Краткое описание:
P-CH MOSFET, -30V, 7.4A, 18mR, SMT
Дополнительная информация
P-channel MOSFET with -30V drain-source voltage and 7.4A continuous drain current. Features low 18mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates from -55°C to 150°C with a gate-source voltage range of ±20V. Surface mountable in an 8-pin PowerPAK 1212 package, this RoHS compliant component offers fast switching with turn-on delay of 11ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | -1V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 74ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 18mR |
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