SI7454DDP-T1-GE3
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Краткое описание:
N-Channel MOSFET, 100V, 21A, 33mR, SO Package
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss), 21A Continuous Drain Current (ID), and 33mΩ Max Drain-Source On-Resistance (Rds On). Features include a 1.5V Threshold Voltage, 550pF Input Capacitance, and fast switching times with 10ns Turn-On Delay and 9ns Fall Time. This surface-mount device operates from -55°C to 150°C with a Max Power Dissipation of 29.7W. Packaged in a leadless, HALOGEN FREE and ROHS COMPLIANT POWERPAK SOP-8, it is suitable for demanding power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.26mm |
| Height | 1.12mm |
| Length | 6.25mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 550pF |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 29.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 33MR |
| Drain to Source Breakdown Voltage | 100V |
