SI7454DP-T1-E3
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N-Channel Power MOSFET, 100V, 5A, 34mR, SOIC, Surface Mount
Дополнительная информация
N-channel power MOSFET with 100V drain-source breakdown voltage and 5A continuous drain current. Features low 34mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount device is housed in a leadless POWERPAK SOP-8 package, offering a maximum power dissipation of 1.9W. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Current | 5A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.9W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 34mR |
| Drain to Source Breakdown Voltage | 100V |
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