SI7456DDP-T1-GE3
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Краткое описание:
100V N-Channel MOSFET, 27.8A, 23mR Rds(on), SO Package
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source voltage and 27.8A continuous drain current. Offers low 23mΩ drain-source on-resistance and 42mΩ maximum Rds On. Operates with a 1.5V threshold voltage and a ±20V gate-source voltage range. This surface-mount component boasts fast switching times with a 13ns turn-on delay and 10ns fall time. Encased in a compact SO package with dimensions of 6.25mm x 5.26mm x 1.12mm, it supports a maximum power dissipation of 35.7W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.26mm |
| Height | 1.12mm |
| Length | 6.25mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 900pF |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 35.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 27.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 42MR |
