SI7456DP-T1-E3
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Краткое описание:
N-Channel Power MOSFET, 100V, 5.7A, 25mR, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source voltage and 5.7A continuous drain current. Offers a low 25mΩ drain-source on-resistance. Designed for surface mounting with a compact 4.9mm x 5.89mm x 1.04mm package. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 10ns. RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 2V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.9W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
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