SI7456DP-T1-GE3
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Краткое описание:
N-Channel Power MOSFET, 100V, 5.7A, 25mR, SOIC
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source voltage and 5.7A continuous drain current. Offers a low 25mΩ drain-source on-resistance. Designed for surface mounting in an SOIC package with a 1.9W maximum power dissipation. Includes fast switching characteristics with a 14ns turn-on delay and 10ns fall time. RoHS compliant and operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25MR |
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