SI7463DP-T1-E3
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P-Channel MOSFET, 40V, 11A, 9.2mR, PowerPAK SOIC
Дополнительная информация
P-channel power MOSFET for general-purpose applications. Features a 40V drain-source breakdown voltage and a maximum continuous drain current of 11A. Offers a low on-resistance of 9.2mΩ at a nominal gate-source voltage of -3V. Encased in a leadless PowerPAK SO-8 package for surface mounting, with dimensions of 4.9mm (L) x 5.89mm (W) x 1.04mm (H). Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.2mR |
| Nominal Vgs | -3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.9W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 200ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 9.2mR |
| Drain to Source Breakdown Voltage | 40V |
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