SI7465DP-T1-E3

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SI7465DP-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 60V 3.2A 64mR Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET with 60V drain-source voltage and 3.2A continuous drain current. Features 64mΩ maximum drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin PowerPAK SO package, supplied on tape and reel. Includes fast switching times with 8ns turn-on and 9ns fall times.
RoHS Compliant
Mount Surface Mount
Width 5.89mm
Height 1.04mm
Length 4.9mm
Series TrenchFET®
Weight 0.01787oz
Polarity P-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 64mR
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 1.5W
Threshold Voltage -3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 65ns
Reach SVHC Compliant No
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 64mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.2A
Drain to Source Voltage (Vdss) -60V
Drain-source On Resistance-Max 64mR

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