SI7469DP-T1-GE3
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Краткое описание:
P-CH MOSFET -80V, 28A, 25mR, SOIC, Surface Mount
Дополнительная информация
P-channel PowerPAK SO surface mount MOSFET with -80V drain-source breakdown voltage and 28A continuous drain current. Features low 25mR drain-source on-resistance and 15ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 83W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.7nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 105ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 25MR |
| Drain to Source Breakdown Voltage | -80V |
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