SI7489DP-T1-GE3
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Краткое описание:
P-CH MOSFET -100V, 7.8A, 41mR, SOIC, Surface Mount
Дополнительная информация
P-channel PowerPAK SO surface mount MOSFET featuring -100V drain-to-source breakdown voltage and 7.8A continuous drain current. Offers low 41mΩ drain-to-source resistance at a nominal gate-to-source voltage of -3V. Includes a maximum power dissipation of 83W and operates across a temperature range of -55°C to 150°C. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 41mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.6nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 41mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain to Source Breakdown Voltage | -100V |
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