SI7501DN-T1-E3
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Краткое описание:
N/P-CH MOSFET 30V 5.4A 35mR 8-Pin PowerPAK
Дополнительная информация
N-channel and P-channel MOSFET transistor for surface mount applications. Features 30V drain-source breakdown voltage and 5.4A continuous drain current. Offers low on-resistance with a maximum of 35mΩ at 10V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a compact 8-pin PowerPAK 1212, measuring 3.05mm x 3.05mm x 1.04mm.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 3.1W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | 30V |
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