SI7540DP-T1-GE3
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Краткое описание:
N/P-CH MOSFET 12V 7.6A 26mR SOIC 8-Pin
Дополнительная информация
N-channel and P-channel MOSFET with 12V drain-source voltage and 7.6A continuous drain current. Features low 26mΩ drain-source on-resistance and 1.4W maximum power dissipation. Operates from -55°C to 150°C, with turn-on delay of 35ns and fall time of 42ns. Packaged in an 8-pin SOIC for surface mounting, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 42ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 17mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 54ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 32mR |
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