SI7620DN-T1-GE3
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Краткое описание:
N-CH MOSFET 150V 3.6A 126mR 8-Pin PowerPAK SMT
Дополнительная информация
N-channel MOSFET transistor featuring 150V drain-source voltage and 3.6A continuous drain current. Surface mount device with a maximum power dissipation of 5.2W and 33W (typical). Offers a low drain-source on-resistance of 103mR at 10V, with a maximum of 126mR. Packaged in an 8-pin PowerPAK 1212-8 for tape and reel distribution, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.124inch |
| Height | 0.042inch |
| Length | 0.124inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 126mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 600pF |
| Power Dissipation | 33W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 103mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 126MR |
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