SI7623DN-T1-GE3
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Краткое описание:
P-CHANNEL MOSFET, -35A, 3.8mR, -20V, 12V, 150°C, Surface Mount
Дополнительная информация
The SI7623DN-T1-GE3 is a P-channel MOSFET with a maximum continuous drain current of -35A and a drain to source resistance of 3.8mR. It can handle a maximum drain to source voltage of -20V and a gate to source voltage of 12V. The device is rated for operation up to 150°C and is available in a surface mount package. It is compliant with RoHS regulations and is lead free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.46nF |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | -35A |
| Drain to Source Voltage (Vdss) | -20V |
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