SI7658ADP-T1-GE3
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Краткое описание:
N-Channel MOSFET, 30V, 60A, 2.2mR, PowerPAK, SOIC
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source voltage and a maximum drain current of 60A. Offers ultra-low on-resistance of 2.2mΩ at 10Vgs. Designed for surface mounting in a leadless PowerPAK SOP-8 package, this component boasts a maximum power dissipation of 5.4W and operates across a wide temperature range of -55°C to 150°C. Halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.2mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.59nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.2mR |
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