SI7686DP-T1-E3
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Краткое описание:
30V 17.9A N-CH MOSFET SOIC 9.5mR Rds On
Дополнительная информация
N-channel MOSFET transistor for surface mount applications, featuring a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 17.9A. Offers a low drain-source on-resistance (Rds On) of 9.5mR, with fast switching characteristics including an 8ns fall time, 13ns turn-on delay, and 23ns turn-off delay. Designed for operation within a -55°C to 150°C temperature range, it supports a gate-to-source voltage (Vgs) up to 20V and has a maximum power dissipation of 37.9W. Packaged in a compact SOIC case with a height of 1.04mm, length of 4.9mm, and width of 5.89mm, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.22nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 37.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
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