SI7738DP-T1-E3
Производится
Краткое описание:
150V 7.7A 38mR N-CH MOSFET, PPAK 8SOIC
Дополнительная информация
N-channel MOSFET with 150V drain-source voltage and 7.7A continuous drain current. Features low 38mΩ drain-source on-resistance and 96W maximum power dissipation. Designed for surface mounting in an 8-SOIC package with a PPAK configuration. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 2.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 96W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 150V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
