SI7742DP-T1-GE3
Производится
Увеличить
Краткое описание:
30V 29A N-CH MOSFET SOIC 3.5mR RdsOn
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 60A continuous drain current. Features low 3.5mΩ drain-to-source resistance and 83W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a surface-mount SOIC case with dimensions of 4.9mm length, 5.89mm width, and 1.04mm height. Includes fast switching characteristics with turn-on delay of 43ns and fall time of 23ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.3nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 43ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
