SI7748DP-T1-GE3
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Краткое описание:
30V 23.5A N-CH MOSFET 4.8mR RdsOn PowerPAK SO
Дополнительная информация
N-channel MOSFET transistor featuring 30V drain-source voltage and 23.5A continuous drain current. Offers a low 4.8mΩ drain-source on-resistance and 56W maximum power dissipation. Designed for surface mount applications with a compact 4.9mm x 5.89mm x 1.04mm PowerPAK SO package. Includes fast switching characteristics with turn-on delay of 36ns and fall time of 16ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.77nF |
| Power Dissipation | 4.8W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 36ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Max Power Dissipation | 56W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.8mR |
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