SI7802DN-T1-E3
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Краткое описание:
250V 1.24A N-CH MOSFET, 435mR Rds On, SMT
Дополнительная информация
N-Channel MOSFET, 250V Drain-Source Breakdown Voltage, 1.24A Continuous Drain Current. Features 435mR Max Drain-Source On Resistance, 3.6V Threshold Voltage, and 10ns Turn-On Delay. Operates from -55°C to 150°C with 1.5W Max Power Dissipation. Surface mountable in a 1212-8 package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 435mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 3.6V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 435mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.24A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 435MR |
| Drain to Source Breakdown Voltage | 250V |
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