SI7812DN-T1-GE3
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Краткое описание:
75V 16A N-CH MOSFET, 37mR Rds On, PowerPAK
Дополнительная информация
N-channel Power MOSFET, 75V drain-source voltage, 16A continuous drain current, and 37mΩ drain-source resistance. Features 15ns turn-on delay, 35ns turn-off delay, and 10ns fall time. Operates from -55°C to 150°C with a 2.3V threshold voltage. Surface mountable in an 8-pin PowerPAK 1212 package, 3.05mm x 3.05mm x 1.04mm, with 3000 units per tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 840pF |
| Threshold Voltage | 2.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 37mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 75V |
