SI7840BDP-T1-E3
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Краткое описание:
N-CH MOSFET 30V 11A 8.5mR 1.8W SMT
Дополнительная информация
N-channel MOSFET featuring 30V drain-source voltage and 11A continuous drain current. Offers a low 8.5mΩ drain-source on-resistance at 10V gate-source voltage. Designed for surface mount applications with a maximum power dissipation of 1.8W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 14ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.5mR |
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