SI7840BDP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 11A 8.5mR 1.8W Surface Mount
Дополнительная информация
The SI7840BDP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.8W and a continuous drain current of 11A. The device is RoHS compliant and features a trench gate structure for low on-resistance. It is suitable for high-frequency switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
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