SI7844DP-T1-E3
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Краткое описание:
30V 6.4A 22mR N-CH MOSFET SOIC
Дополнительная информация
Dual N-Channel MOSFET featuring 30V Drain-Source Breakdown Voltage and 6.4A Continuous Drain Current. Surface mountable in a PPAK SO-8 package, this component offers a low 22mΩ Drain-Source On-Resistance. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with turn-on delay of 8ns and fall time of 10ns. Maximum power dissipation is rated at 1.4W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.07mm |
| Length | 5.99mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 2.4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.4W |
| Threshold Voltage | 2.4V |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 30V |
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