SI7846DP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET, 150V, 4A, 50mR, Surface Mount
Дополнительная информация
The SI7846DP-T1-GE3 is a single N-CHANNEL TrenchFET MOSFET from Vishay with a maximum operating voltage of 150V and a continuous drain current of 4A. It features a drain to source resistance of 50mR and a maximum power dissipation of 1.9W. The device is designed for surface mount applications and has a maximum operating temperature range of -55°C to 150°C. It is compliant with RoHS regulations and is available in tape and reel packaging with 3000 units per package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 150V |
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