SI7852ADP-T1-E3
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Краткое описание:
80V 30A N-Ch MOSFET, 17mR RdsOn, PowerPAK-SO-8
Дополнительная информация
Single N-Channel Power MOSFET featuring 80V drain-source voltage and 17mΩ maximum drain-source on-resistance. This surface mount component offers a continuous drain current of 30A and a maximum power dissipation of 62.5W. Key switching characteristics include a 9ns fall time, 16ns turn-on delay, and 26ns turn-off delay. Operating temperature range spans -55°C to 150°C, with a nominal gate-source voltage of 2.5V. Packaged in a PowerPAK-SO-8 for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 17mR |
| Nominal Vgs | 2.5V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.825nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 62.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 17mR |
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