SI7852DP-T1-GE3
Производится
Увеличить
Краткое описание:
80V 7.6A N-CH MOSFET, 16.5mR Rds On, 1.9W PD, SO-8
Дополнительная информация
N-channel PowerPAK SO MOSFET, 80V drain-source voltage, 7.6A continuous drain current, and 16.5mΩ drain-source resistance. Features include 2V threshold voltage, 17ns turn-on delay, 40ns turn-off delay, and 31ns fall time. Operating temperature range from -55°C to 150°C with 1.9W maximum power dissipation. Surface mount design with 4.9mm length, 5.89mm width, and 1.04mm height.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 2.32nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 80V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
