SI7858ADP-T1-E3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
N-Channel Power MOSFET, 12V, 20A, 2.6mR RdsOn
Дополнительная информация
N-channel power MOSFET with 12V drain-source voltage and 20A continuous drain current. Features ultra-low 2.6mΩ drain-source on-resistance and 1.9W power dissipation. Designed for surface mount applications with a compact SOP-8 PowerPAK package, offering fast switching speeds with turn-on delay of 40ns and fall time of 70ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.7nF |
| Power Dissipation | 1.9W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 2.6mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
