SI7860DP-T1-E3
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Краткое описание:
30V 11A N-CH MOSFET 8mR SO PowerPAK
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source voltage and 11A continuous drain current. Offers low 8mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting in an 8-pin SO package, this component boasts fast switching speeds with turn-on delay of 18ns and fall time of 12ns. Operating temperature range spans -55°C to 150°C with 1.8W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.197inch |
| Height | 0.042inch |
| Length | 0.235inch |
| Series | SkyFET®, TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.45nF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8mR |
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