SI7862ADP-T1-E3
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N-Channel MOSFET, 16V, 18A, 3mR Rds On, PowerPAK
Дополнительная информация
N-channel power MOSFET with 16V drain-source voltage and 18A continuous drain current. Features ultra-low 3mΩ drain-source on-resistance and 8V gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Surface-mount design in a leadless PowerPAK SOP-8 package, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 7.34nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 42ns |
| Turn-Off Delay Time | 120ns |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 16V |
| Drain-source On Resistance-Max | 3mR |
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