SI7884BDP-T1-GE3
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Краткое описание:
N-Channel Power MOSFET, 40V, 18.5A, 7.5mR, Si, PowerPAK
Дополнительная информация
N-channel power MOSFET with 40V drain-source voltage and 18.5A continuous drain current. Features low 7.5mΩ drain-source on-resistance and 3V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 46W. Packaged in a surface-mount PowerPAK SOP-8, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.54nF |
| Power Dissipation | 4.6W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 46W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 7.5mR |
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