SI7892BDP-T1-E3
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Краткое описание:
N-Channel Power MOSFET, 30V, 15A, 4.2mR RdsOn
Дополнительная информация
N-channel power MOSFET with 30V drain-source voltage and 15A continuous drain current. Features 4.2mΩ maximum drain-source on-resistance and 5W maximum power dissipation. This surface-mount component offers a 1V threshold voltage and 3.775nF input capacitance. Designed for general-purpose power applications, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.775nF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.2mR |
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