SI7904BDN-T1-GE3
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Краткое описание:
2-Ch N-Ch MOSFET, 20V, 6A, 30mR, PowerPAK-8
Дополнительная информация
2-channel N-channel power MOSFET featuring 20V drain-source voltage and 6A continuous drain current. Offers a low 30mΩ drain-source on-resistance. Designed for surface mount applications with a compact 1212-8 PowerPAK-8 package. Includes fast switching characteristics with 5ns turn-on and fall times. Operates across a wide temperature range from -55°C to 150°C. Halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 860pF |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30MR |
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