SI7942DP-T1-E3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
Dual N-Ch MOSFET 100V 49mR 3.8A PowerPAK SO-8
Дополнительная информация
Dual N-Channel Power MOSFET, 100V Vdss, 49mR Rds On Max, 3.8A Continuous Drain Current. Features 2 N-Channel elements in a PowerPAK SO-8 surface mount package with 1.4W power dissipation. Operates from -55°C to 150°C, with fast switching times including 15ns turn-on and 20ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 49mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.4W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 49mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 49mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
