SI7946DP-T1-E3
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Краткое описание:
150V 2.1A N-CH MOSFET DUAL SOIC 150mR
Дополнительная информация
Dual N-Channel MOSFET, 150V Drain-Source Breakdown Voltage, 2.1A Continuous Drain Current, 150mΩ Max Drain-Source On-Resistance. Features 11ns Turn-On Delay, 30ns Turn-Off Delay, and 20ns Fall Time. Operates from -55°C to 150°C with 1.4W Max Power Dissipation. Surface mountable in an SOIC package, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.4W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 150MR |
| Drain to Source Breakdown Voltage | 150V |
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