SI7948DP-T1-GE3
Снят с производства
Увеличить
Краткое описание:
60V 3A N-CH MOSFET SOIC, 75mR RdsOn, 1.4W Pd
Дополнительная информация
Dual N-channel MOSFET, 60V Drain-Source Voltage, 3A Continuous Drain Current, and 75mΩ Rds On. This surface mount transistor features a PPAK SO-8 package with a maximum power dissipation of 1.4W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and an 8ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SI7 |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
