SI7960DP-T1-E3
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Краткое описание:
60V 6.2A 21mR N-CH MOSFET SOIC
Дополнительная информация
Dual N-Channel MOSFET, 60V Vds, 6.2A continuous drain current, and 21mΩ max Rds(on). Features a 1.4W power dissipation and operates across a -55°C to 150°C temperature range. Surface mountable in a SOIC package with a 3V threshold voltage. Includes 12ns turn-on delay and 60ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.4W |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 21mR |
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