SI7994DP-T1-GE3
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Краткое описание:
2-Ch N-CH MOSFET 30V 20A 5.6mR SOIC SMT
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 20A continuous drain current. Features low 5.6mR drain-source on-resistance and 3.5W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC for surface mounting, supplied on tape and reel. Includes 2 N-channel elements with a 3V threshold voltage.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.6mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.5nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 56MR |
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