SI8469DB-T2-E1
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Краткое описание:
P-CHANNEL MOSFET, 4.6A, 8V, 64mR, Surface Mount
Дополнительная информация
The SI8469DB-T2-E1 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.8W and is RoHS compliant. The device features a drain to source voltage of 8V, a drain to source resistance of 64mR, and an input capacitance of 900pF.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 900pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 64mR |
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