SI8497DB-T2-E1
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Краткое описание:
P-CHANNEL MOSFET, 13A, 30V, 53mR, BGA, Surface Mount
Дополнительная информация
The SI8497DB-T2-E1 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 13A and a drain to source voltage of 30V. The device features a drain to source resistance of 53mR and an input capacitance of 1.32nF. It is packaged in a BGA package and is suitable for surface mount applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 22ns |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.32nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
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