SI8499DB-T2-E1
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Краткое описание:
P-CHANNEL TrenchFET MOSFET, 16A, 32mR, -20V, 150°C, Surface Mount
Дополнительная информация
The SI8499DB-T2-E1 is a P-CHANNEL TrenchFET MOSFET with a continuous drain current of 16A and a drain to source resistance of 32mR. It can handle a drain to source voltage of -20V and has a maximum operating temperature of 150°C. The device is surface mount and RoHS compliant. It is suitable for use in a variety of applications including power management and switching circuits.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.3nF |
| Threshold Voltage | -500mV |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 32MR |
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