SI8805EDB-T2-E1
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Краткое описание:
P-CHANNEL TrenchFET MOSFET, 8V, 3.1A, 500mW, BGA, -55°C to 150°C
Дополнительная информация
The SI8805EDB-T2-E1 is a P-CHANNEL TrenchFET MOSFET from Vishay, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 500mW and a continuous drain current of -3.1A. The device is packaged in a BGA package and is suitable for surface mount applications. It is also RoHS compliant and has a drain to source resistance of 56mR.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Packaging | Tape and Reel |
| Rds On Max | 68mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 56mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | -3.1A |
| Drain to Source Voltage (Vdss) | 8V |
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