SI8806DB-T2-E1
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N-Channel MOSFET, 12V, 3.9A, 35mR, BGA, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring a 12V drain-to-source voltage and 3.9A continuous drain current. Offers a low 35mΩ drain-to-source resistance at a 4.5V gate-to-source voltage. This surface-mount component is housed in a compact BGA package with dimensions of 0.84mm x 0.84mm x 0.213mm. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 7ns turn-on delay and 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.84mm |
| Height | 0.213mm |
| Length | 0.84mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 43mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 12V |
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