SI8817DB-T2-E1
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Краткое описание:
P-CHANNEL MOSFET, 1-Channel, 2.9A, 20V, 76mR, BGA, Surface Mount
Дополнительная информация
The SI8817DB-T2-E1 is a P-channel MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 2.9A and a drain to source voltage of 20V. The device has a maximum power dissipation of 500mW and is packaged in a BGA with a lead-free finish. It is RoHS compliant and suitable for surface mount applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 76mR |
| Package/Case | BGA |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 615pF |
| Power Dissipation | 900mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 76mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
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