SI9424BDY-T1-E3
Снят с производства
Увеличить
Краткое описание:
P-CH MOSFET 20V 5.6A 25mR SOIC Surface Mount
Дополнительная информация
P-channel MOSFET, 20V drain-source breakdown voltage, 5.6A continuous drain current, and 25mΩ maximum drain-source on-resistance. Features a 4mm width, 5mm length, and 1.55mm height in an 8-SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes 30ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 130ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 9V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25MR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
