SI9433BDY-T1-E3
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Краткое описание:
P-CH MOSFET, -20V, 4.5A, 40mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET with a 20V drain-source voltage and 4.5A continuous drain current. Features a low 40mΩ maximum drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 1.3W maximum power dissipation. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.3W |
| Threshold Voltage | -600mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 40mR |
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