SI9936DY
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Краткое описание:
2 N-Ch MOSFET 8V 4A 32mR SMD
Дополнительная информация
Dual N-channel MOSFET, surface mount, featuring 30V drain-source voltage and 5A continuous drain current. Offers low on-resistance of 32mΩ at 10V, with a maximum power dissipation of 3.12W. Operates across a wide temperature range from -55°C to 150°C, with fast switching speeds including a 10ns fall time. Packaged in tape and reel for efficient assembly.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Input Capacitance | 680pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 11ns |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 3.12W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 8V |
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