SI9945AEY-T1-E3
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Краткое описание:
60V N-CH MOSFET SO-8 3.7A 80mR 2.4W
Дополнительная информация
N-channel MOSFET in SO package, featuring 60V drain-to-source breakdown voltage and 3.7A continuous drain current. Offers low 80mΩ drain-to-source resistance and 2.4W maximum power dissipation. Operates across a -55°C to 175°C temperature range with fast switching times, including 9ns turn-on and 8ns fall times. This surface-mount component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI9 |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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