SIA414DJ-T1-GE3
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N-Channel Power MOSFET, 8V, 12A, 11mR, SC Package
Дополнительная информация
N-channel power MOSFET with 8V drain-source voltage and 12A continuous drain current. Features 11mΩ maximum drain-source on-resistance and 1.8nF input capacitance. Operates from -55°C to 150°C with 3.5W maximum power dissipation. Surface mountable in a leadless SC package, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 800mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | 800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 11MR |
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