SIA417DJ-T1-GE3
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Краткое описание:
P-CH MOSFET 8V 12A 3.5W 23mR SC
Дополнительная информация
P-channel MOSFET with 8V drain-source breakdown voltage and 12A continuous drain current. Features 23mΩ maximum drain-source on-resistance at 4.5V gate-source voltage. Operates with a threshold voltage of -1V and offers fast switching with 15ns turn-on delay and 45ns fall time. This surface-mount component has 1.6nF input capacitance and a maximum power dissipation of 3.5W, suitable for a wide temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | -1V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 23mR |
| Drain to Source Breakdown Voltage | 8V |
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